7 results
Improved Performance of MESFET Devices with L.T.GaAs Buffer Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 789
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- 1995
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Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 459
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- 1995
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Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 325 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 383
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- 1993
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Laser Processed Silicides for GaAs Hemts
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- Journal:
- MRS Online Proceedings Library Archive / Volume 158 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 261
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- 1989
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The Influence of Arsenic Flux in the Defect Structure of MBE Deposited GaAs and Ga1−xAlxAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 126 / 1988
- Published online by Cambridge University Press:
- 21 February 2011, 23
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- 1988
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Doped Channel MBE GaAs Field Effect Transistor (MEDFET) with Laser Processed Ohmic Contacts
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 647
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- 1988
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Schottky Barrier Formation on Electron Beam Deposited Amorphous Si1−xGex:H alloys and Amorphous (Si/Si1−xGex):H Modulated Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 54 / 1985
- Published online by Cambridge University Press:
- 26 February 2011, 521
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- 1985
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